Intel to Sample Phase Change Memory This Year
by Marcus Yam
Intel claims it will mass produce phase change memory before the end of 2007
This week Intel privately shared parts of its roadmap for memory technologies through 2008. Intel’s progress on phase-change memory, PCM or PRAM, will soon be sampled to customers with mass production possible before the end of the year.
Phase-change memory is positioned as a replacement for flash memory, as it has non-volatile characteristics, but is faster and can be scaled to smaller dimensions. Flash memory cells can degrade and become unreliable after as few as 10,000 writes, but PCM is much more resilient at more than 100 million write cycles. For these reasons, Intel believes
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Posted by Chris on March 20th, 2007
Interfaces of chalcogenide solar cells: a study of the composition at the Cu(In,Ga)Se2/CdS contact
Schulmeyer, T. Hunger, R. Fritsche, R. Jackel, B. Jaegermann, W. Klein, A. Kniese, R. Powalla, M.
A. Klein. Darmstadt University of Technology, Institute of Materials Science, Petersenstrasse 23, 64287 Darmstadt, Germany
Copyright (c) 2006 Elsevier B.V.
ABSTRACT
The chemical composition of the Cu(In,Ga)Se2/CdS interface is studied using photoelectron spectroscopy, with monochromatized Al Kα and synchrotron radiation as excitation source. The samples were prepared by the decapping of Se layers, yielding a Cu-poor surface composition... more
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Posted by Chris on March 20th, 2007
Characterisation of chalcogenide 2D photonic crystal waveguides and nanocavities using silica fibre nanowires
Smith, C. (Centre for Ultrahigh-Bandwidth Devices for Opt. Syst., Univ. of Sydney, NSW, Australia); Grillet, C.; Tomljenovic-Hanic, S.; Magi, E.C.; Moss, D.; Eggleton, B.J.; Freeman, D.; Madden, S.; Luther-Davies, B. Source: Physica B, v 394, n 2, 15 May 2007, p 289-92
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Posted by Chris on March 15th, 2007