Fabrication of Ge2Sb2Te5 based PRAM device at 60nm scale by using UV nanoimprint lithography
Gun-Young Jung (Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., South Korea); Heon Lee; Sung-Hoon Hong; Ki-Yeon Yang Source: Microelectronic Engineering, v 84, n 4, April 2007, p 573-6