chalcogenides.com

Entrez PubMed: "Kavokin A, Malpuech G, Glazov M.

Department of Physics and Astronomy, University of Southampton, SO17 1BJ Southampton, United Kingdom.

A remarkable analogy is established between the well-known spin Hall effect and the polarization dependence of Rayleigh scattering of light in microcavities. This dependence results from the strong spin effect in elastic scattering of exciton polaritons: if the initial polariton state has a zero spin and is characterized by some linear polarization, the scattered polaritons become strongly spin polarized. The polarization in the scattered state can be positive or negative dependent on the orientation of the linear polarization of the initial state and on the direction of scattering. Very surprisingly, spin polarizations of the polaritons scattered clockwise and anticlockwise have different signs. The optical spin Hall effect is possible due to strong longitudinal-transverse splitting and finite lifetime of exciton polaritons in microcavities."

UMI ProQuest Digital Dissertations - Full Citation & Abstract:

"Fabrication and modeling of cadmium sulfide/cadmium telluride solar cells by the close-spaced sublimation technique "

Showa Shell to Launch Commercial Production of Next-generation CIS Solar Battery in 2007:

"Tokyo, Aug 16, 2005 (JCN) - Showa Shell Sekyu has announced production of next-generation CIS (copper, nidium, selenium) solar batteries on a commercial basis in 2007.

Photovoltaic power generation that utilizes inexhaustible solar energy is expected to play a crucial role in curbing global warming.

Showa Shell has worked on solar batteries since 1978 with the aim of making them a new business and developed technologies to improve conversion efficiency and produce solar batteries in commercial volume.

Leveraging such technologies, the company will construct the world's first CIS solar battery plant for commercial production, beginning in December 2005.

To be located in Miyazaki Prefecture, the plant will have a capacity to produce 20MW of batteries per year. Commercial production is expected to start in the beginning of 2008."

Cranfield University, DCMT - Chemical Bath Deposition Growth of Cadmium Sulphide:

"Chemical bath deposition (CBD) is a convenient and low cost technique for growing thin films of many types of materials and is often used to grow the CdS window layer for thin film solar cells. Many different recipes exist for the growth of CdS, and our preferred recipe has evolved over several years. We have recently developed an ultrasonic technique that gives films with a high optical quality. The precursor solution contains cadmium chloride (0.0020 M), ammonium chloride (0.028 M), thiourea (0.057 M) and de-ionized water, with ammonia solution (22%) added to adjust the pH (range of 8.3 to 11.3). Deposition is performed in a double walled water jacket, which is placed in the centre of an ultrasonic bath.

Substrates are mounted on a glass holder and the solution is continuously stirred at a constant speed during deposition, while the bath temperature is increased to a maximum of 70±2 °C from room temperature at a rate of 3 °C min-1. The maximum bath temperature is limited by the rate of homogeneous reaction and the evaporation of ammonia from the chemical bath. This results in a colour change during deposition (see below) and has to be carefully managed to promote deposition on the substrate as opposed to precipitation into the solution. "

Cranfield University, DCMT - Fundamental Materials Properties:

"This group is involved in the experimental derivation of a number of different materials parameters for chalcogenide materials. "

The properties we have studied give us a better understanding of the solar cells as a whole, allowing the manufacture of more efficient devices.
Lattice Parameter
Phase Diagram
Optical Properties
Sulphur Diffusion

BULK EFFECT DEVICE MAKING - Patent Storm:

"United States Patent Class 438/900
BULK EFFECT DEVICE MAKING"

Spacer chalcogenide memory method and device
The present invention includes devices and methods to form memory cell devices including a spacer comprising a programmable resistive material alloy. Particular aspects of the present invention are described in the claims, specification and drawings.

Chalcogenide electrochemical cell - Patent 4301221:

"A battery is provided in which the anode contains an alkali metal in a high state of thermodynamic activity; the cathode comprises a partially alkali metal-intercalated chalcogenide of the formula A.sub.y MZ.sub.x wherein A is an alkali metal more electropositive and larger than the anode alkali metal, M is a transition metal of Group IV or V, x is a numerical value of from about 1.8 to about 2.1, y is a numerical value of from about 0.01 to about 1 and Z is sulfur, selenium or tellurium; and the electrolyte comprises ions of the anode metal in a medium which is compatible with the anode and cathode allowing transport of the ion from anode to intercalate into the cathode."

Thin film diode integrated with chalcogenide memory cell Number:6,855,975 from the United States Patent and Trademark Office (PTO) owispatent:

"An integrated programmable conductor memory cell and diode device in an integrated circuit comprises a diode and a glass electrolyte element, the glass electrolyte element having metal ions mixed or dissolved therein and being able to selectively form a conductive pathway under the influence of an applied voltage. In one embodiment, both the diode and the memory cell comprise a chalcogenide glass, such as germanium selenide (e.g., Ge.sub.2 Se.sub.8 or Ge.sub.25 Se.sub.75).

The first diode element comprises a chalcogenide glass layer having a first conductivity type, the second diode element comprises a chalcogenide glass layer doped with an element such as bismuth and having a second conductivity type opposite to the first conductivity type and the memory cell comprises a chalcogenide glass element with silver ions therein. In another embodiment, the diode comprises silicon and there is a diffusion barrier layer between the diode and the chalcogenide glass memory element. Methods of fabricating integrated programmable conductor memory cell and diode devices are also disclosed.

Patent Number: 6,855,975 Issued on 02/15/2005 to Gilton "

Optics Express:

"We have fabricated and tested planar reflectors exhibiting an omnidirectional stop band centered near 1750 nm wavelength. The reflectors are comprised of multiple layers of Ge33As12Se55 chalcogenide glass and polyamide-imide polymer. Glass layers were deposited by thermal evaporation and polymer layers were deposited by spin-casting. Thin film stacks of up to 13 layers showed good planarity and adhesion, which we attribute to the well-matched thermo-mechanical properties of the materials. The optical properties of the reflectors were tested in both transmission and reflection, and the results are in good agreement with theoretical predictions. Relatively low-temperature processing steps were employed, making these reflectors of interest for integrated optics.
© 2005 Optical Society of America
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