A Public Informational Resource on Chalcogenides Their Properties and Applications.
Gun-Young Jung (Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., South Korea); Heon Lee; Sung-Hoon Hong; Ki-Yeon Yang Source: Microelectronic Engineering, v 84, n 4, April 2007, p 573-6
Intel to Sample Phase Change Memory This Year
by Marcus Yam
Intel claims it will mass produce phase change memory before the end of 2007
This week Intel privately shared parts of its roadmap for memory technologies through 2008. Intel’s progress on phase-change memory, PCM or PRAM, will soon be sampled to customers with mass production possible before the end of the year.
Phase-change memory is positioned as a replacement for flash memory, as it has non-volatile characteristics, but is faster and can be scaled to smaller dimensions. Flash memory cells can degrade and become unreliable after as few as 10,000 writes, but PCM is much more resilient at more than 100 million write cycles. For these reasons, Intel believes
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